| PART |
Description |
Maker |
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PS7241S-1A PS7241S-1A-E3 PS7241S-1A-E4 PS7241S-1A- |
CURRENT LIMIT TYPE 4-PIN SOP 400 V OCMOS FET 1-ch OCMOS FET 电流限制4引脚SOP 400伏OCMOS场效通道OCMOS场效应管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
